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The exit side of through holes drilled in a percussion way on silicon wafer of thick; (a) at ; (b) at .
The threshold laser intensity when the back surface spallation starts to initiate on silicon wafers. The experimental data (solid squares) are shown together with a curve fitted straight line.
The spallation depth varying with the ablation laser intensity at wafer thickness of . The solid squares are the experimental data; the solid line is the curve-fitting result to guide the eyes.
The spallation depth as a function of wafer thickness at two laser intensities, (a) and (b) . The solid squares are the experimental data; the solid line is the curve-fitting results.
Elimination of the rear surface spallation by using an impedance-matched CrystalBond wafer mounting wax medium of thickness. The laser intensity was and the silicon wafer thickness was ; (a) back side of a through hole drilled on the Si wafer with the matching medium; (b) without.
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