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Effects of ion energy on the crystal size and hydrogen bonding in plasma-deposited nanocrystalline silicon thin films
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10.1063/1.1913803
/content/aip/journal/jap/97/10/10.1063/1.1913803
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/10/10.1063/1.1913803

Figures

Image of FIG. 1.
FIG. 1.

Raman spectra of films codeposited on the anode and cathode under total pressures of 500, 900, and . The substrate temperature and the rf power were kept at and , respectively.

Image of FIG. 2.
FIG. 2.

Infrared spectra of cathode and anode samples codeposited at . The lines show the deconvolution of the experimental data in various Gaussian peaks. The inset shows the deformation absorption band and its deconvolution into three peaks.

Image of FIG. 3.
FIG. 3.

Hydrogen evolution spectra for anode and cathode films deposited at . Remark for the cathode sample, the two well-separated hydrogen evolution peaks predicted by simulation studies (see Ref. 27), and characteristic of hydrogen evolution from grain boundaries and diluted Si–H bonds in the bulk.

Image of FIG. 4.
FIG. 4.

IR spectra of anode films deposited under a rf powers of 10 and . We also presented the IR spectra of cathode films deposited under a rf power of . The lines show the deconvolution of the experimental data into various Gaussian peaks. The total pressure and substrate temperature were kept at and , respectively.

Image of FIG. 5.
FIG. 5.

Hydrogen evolution spectra for anode (◻) and cathode (0) films from the rf power series.

Image of FIG. 6.
FIG. 6.

Raman spectra of anode and cathode films deposited at 100, 150, and . The pressure and rf power were kept at and , respectively.

Image of FIG. 7.
FIG. 7.

Effect of the substrate temperature on the IR stretching (right) and wagging (left) bands of cathode films from the temperature series.

Image of FIG. 8.
FIG. 8.

Hydrogen evolution spectra for cathode films from the temperature series. Note that the sample deposited at is characterized by a single peak at , corresponding to hydrogen evolution from grain boundaries, and almost no contribution from bulk Si–H.

Tables

Generic image for table
Table I.

Effect of the total pressure during deposition on the properties of films codeposited at and on the cathode and anode, respectively. The self-bias on the rf electrode can be directly related to the energy of the ions on cathode samples. Note that the thickness is always higher for the films deposited on the cathode. The size of the crystallites has been deduced from grazing x-ray diffraction measurements, the crystalline fraction from spectroscopic ellipsometry measurements, and the hydrogen content from the integrated absorption of the IR wagging band. The position and full width at half maximum of the crystalline and amorphous modes deduced from Raman measurements are used to characterize structure and the disorder of the films.

Generic image for table
Table II.

Effect of the rf power on the properties of films codeposited at and on the cathode and anode, respectively. See caption in Table I for more details.

Generic image for table
Table III.

Effect of the substrate temperature on the properties of films codeposited at and rf power of on the cathode and anode, respectively. See caption in Table I for more details.

Generic image for table
Table IV.

Summary of the various modes reported for groups in the wagging and deformation bands of the IR spectra.

Generic image for table
Table V.

Summary of the various modes reported for groups in the stretching band of the IR spectra.

Generic image for table
Table VI.

Summary of the position and width (/) of the various IR-absorption modes in silicon materials with increasing degree of order, from amorphous to polymorphous, nanocrystalline, and porous silicon films. The presence of sharp and narrow absorption peaks in the IR spectra, particularly in the stretching region, provides a clear indication of the presence of nanocrystals in the films.

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/content/aip/journal/jap/97/10/10.1063/1.1913803
2005-05-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of ion energy on the crystal size and hydrogen bonding in plasma-deposited nanocrystalline silicon thin films
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/10/10.1063/1.1913803
10.1063/1.1913803
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