1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Characterization of diodes with selectively regrown -AlGaN by metal-organic chemical-vapor deposition and its application to GaN-based bipolar transistors
Rent:
Rent this article for
USD
10.1063/1.1914952
/content/aip/journal/jap/97/11/10.1063/1.1914952
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/11/10.1063/1.1914952
/content/aip/journal/jap/97/11/10.1063/1.1914952
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/jap/97/11/10.1063/1.1914952
2005-05-23
2014-11-26
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of AlGaN∕GaNp-n diodes with selectively regrown n-AlGaN by metal-organic chemical-vapor deposition and its application to GaN-based bipolar transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/11/10.1063/1.1914952
10.1063/1.1914952
SEARCH_EXPAND_ITEM