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Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates
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10.1063/1.1914956
/content/aip/journal/jap/97/11/10.1063/1.1914956
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/11/10.1063/1.1914956
/content/aip/journal/jap/97/11/10.1063/1.1914956
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/content/aip/journal/jap/97/11/10.1063/1.1914956
2005-05-24
2014-08-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/11/10.1063/1.1914956
10.1063/1.1914956
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