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Zirconia-germanium interface photoemission spectroscopy using synchrotron radiation
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View: Figures


Image of FIG. 1.
FIG. 1.

Cross-sectional high-resolution transmission electron microscopy (HR-TEM) image of a sub- EOT gate stack (see Ref. 7) showing no apparent interfacial layer between the atomically abrupt high- dielectric and the substrate.

Image of FIG. 2.
FIG. 2.

sample surface root-mean-square roughness measured by atomic force microscopy (AFM) as a function of the etch time in 100:1 aqueous HF solution.

Image of FIG. 3.
FIG. 3.

(a) Evolution of the Ge core-level SR-PES spectra as a function of the stack wet-etching time taken at a photon energy of . (b) Scaled and zoomed spectra after 3, 6, and of etch disclosing the embedded Zr core-level signals of similar binding energy.

Image of FIG. 4.
FIG. 4.

Peak-fitted SR-PES spectra from the stack after of etch with both elemental and oxidized Ge peaks assigned.

Image of FIG. 5.
FIG. 5.

Extracted core-level Ge fitted peak areas as a function of etch time. Cross-sectional schematics of the stack are also included to illustrate the layer-by-layer etching progress.

Image of FIG. 6.
FIG. 6.

Illustrations of escape depth calculation of the photoelectrons from Ge substrate at two different time points: (i) right around the complete removal and (ii) right around the complete removal.

Image of FIG. 7.
FIG. 7.

(a) Valence-band photoemission spectra from thicker captured during the etching evolution. (b) Valence-band spectra (left) from a clean bulk Ge sample and the stack after of etch with their corresponding Ge core-level peaks aligned (right).

Image of FIG. 8.
FIG. 8.

Energy-band diagram of the structure inferred from the SR-PES measurements.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Zirconia-germanium interface photoemission spectroscopy using synchrotron radiation