Scanning electron microscopy (SEM) picture of the films deposited on Pt wafers showing a columnar structure.
(a) Dielectric constant vs frequency of the different films. Films annealed in ozone show a slight increase in the dielectric constant. (b) The loss tangents vs frequency of the different films. It was noticed that films which were postannealed in ozone showed a lowering of the loss tangents and its lowest for films postannealed in ozone at .
Dielectric constant vs voltage for only the films postannealed in ozone at is shown in comparison with films without top electrode annealing and films with top electrode annealing in oxygen. Note the slight shift in the curve for films without the top electrode anneal.
Leakage measurements of the different films at . The leakage is found to decrease after ozone postannealing until , however, beyond that it increases again.
vs plots of the different films. The plots are linear for the ozone annealed films.
vs plots of the different films from which the barrier heights were extracted.
A plot of the different barrier heights vs the ozone postannealing temperature. The barrier height is highest for the films postannealed in ozone at which might be a cause for its low leakage current.
Defect distribution of oxygen vacancies , electrons , and holes of a Pt/BST/Pt structure at equilibrated at at (a) and (b) . The formation of junctions reduces the conductivity of the film exposed to the higher oxygen activity.
Calculated small signal resistivity of a -thick BST thin film at as a function of the postannealing under different oxygen partial pressures at .
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