1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Oxidation-enhanced diffusion of boron in very low-energy -implanted silicon
Rent:
Rent this article for
USD
10.1063/1.1927687
/content/aip/journal/jap/97/11/10.1063/1.1927687
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/11/10.1063/1.1927687
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Oxide thickness reduction at 850 °C due to a very low-energy nitrogen implantation in the silicon substrate.

Image of FIG. 2.
FIG. 2.

As-implanted nitrogen profile after a implantation at 3 keV.

Image of FIG. 3.
FIG. 3.

Time variation of the nitrogen profile within the oxide during oxidation at 850 °C from 30 to 120 min.

Image of FIG. 4.
FIG. 4.

Boron profiles after inert ambient annealing and oxidation in dry oxygen ambient in very low-energy (3 keV, ) nitrogen-implanted silicon.

Image of FIG. 5.
FIG. 5.

Fit of the reference (nonimplanted) boron profiles in the case of inert ambient annealing (a) and oxidation in dry ambient (b) for a 60-min ambient annealing. In case (a) the simulation was possible using the default diffusion coefficient of SSUPREM-IV. In case (b) a diffusivity enhancement of 12,8 was necessary.

Image of FIG. 6.
FIG. 6.

Fit of the inert ambient boron profiles in the case of nitrogen implantation starting from the previous time interval. The default diffusion coefficient value was used indicating that TED phenomena are completed within the first 30 min at 850 °C.

Image of FIG. 7.
FIG. 7.

Fit of the boron profiles in dry oxygen ambient in the case of nitrogen implantation starting from the previous time interval. A diffusivity enhancement of 13 was necessary.

Loading

Article metrics loading...

/content/aip/journal/jap/97/11/10.1063/1.1927687
2005-06-06
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxidation-enhanced diffusion of boron in very low-energy N2+-implanted silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/11/10.1063/1.1927687
10.1063/1.1927687
SEARCH_EXPAND_ITEM