Oxide thickness reduction at 850 °C due to a very low-energy nitrogen implantation in the silicon substrate.
As-implanted nitrogen profile after a implantation at 3 keV.
Time variation of the nitrogen profile within the oxide during oxidation at 850 °C from 30 to 120 min.
Boron profiles after inert ambient annealing and oxidation in dry oxygen ambient in very low-energy (3 keV, ) nitrogen-implanted silicon.
Fit of the reference (nonimplanted) boron profiles in the case of inert ambient annealing (a) and oxidation in dry ambient (b) for a 60-min ambient annealing. In case (a) the simulation was possible using the default diffusion coefficient of SSUPREM-IV. In case (b) a diffusivity enhancement of 12,8 was necessary.
Fit of the inert ambient boron profiles in the case of nitrogen implantation starting from the previous time interval. The default diffusion coefficient value was used indicating that TED phenomena are completed within the first 30 min at 850 °C.
Fit of the boron profiles in dry oxygen ambient in the case of nitrogen implantation starting from the previous time interval. A diffusivity enhancement of 13 was necessary.
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