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Effect of carrier loss through waveguide layer recombination on the internal quantum efficiency in large-optical-cavity laser diodes
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10.1063/1.1929087
/content/aip/journal/jap/97/11/10.1063/1.1929087
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/11/10.1063/1.1929087
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the band gap (refractive index profile) and mode intensity in a symmetric broadened [ (a) and (c)] and asymmetric nonbroadened [ (b) and (d)], symmetric (dashed) and asymmetric (solid) waveguide structures. The refractive indices used correspond to an InGaAsP waveguide, at , with material band gaps of (waveguide), ( cladding), and (asymmetric waveguide cladding). Also shown (dashed curves) are OCL carrier density distributions calculated at with , , and , and the background carrier densities (lines 1) and (lines 2).

Image of FIG. 2.
FIG. 2.

Normalized carrier densities in the OCL of the laser: -the normalized carrier density at the OCL--contact boundary vs the normalized -OCL thickness ; -normalized carrier density profile in the waveguide vs the normalized transverse coordinate , calculated at normalized background carrier densities (2,3) and , and and 2.5 . The dash-dotted lines are for the case of vanishingly small recombination and can be interpreted in either set of axes.

Image of FIG. 3.
FIG. 3.

The internal quantum efficiency due to waveguide recombination vs the normalized (lower axis) and absolute (upper axis) thickness of the waveguide, calculated using the exact semianalytical method (solid curves) and the approximate analytical method (dashed curves). The parameters used when recalculating the renormalized to absolute thickness are those shown in the caption of Fig. 1. The vertical dash-dotted lines correspond to the structures of Fig. 1, marked by the corresponding letter.

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/content/aip/journal/jap/97/11/10.1063/1.1929087
2005-06-07
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of carrier loss through waveguide layer recombination on the internal quantum efficiency in large-optical-cavity laser diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/11/10.1063/1.1929087
10.1063/1.1929087
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