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Near-infrared intersubband transitions in InGaAs–AlAs–InAlAs double quantum wells
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Image of FIG. 1.
FIG. 1.

Illustration of strain-compensated DQW conduction-band profile , with square moduli of the wave functions of (, 2, 3, and 4), states localized in . The dashed line represents the Fermi energy . The arrows indicate the individual intersubband transitions to be considered.

Image of FIG. 2.
FIG. 2.

Map of the oscillator strength (gray scale contours) and transition energies (dashed line contours) for intersubband transitions 1–4 [panel (a)] and 2–4 [panel (b)] over the field of the two well width parameters. Locations of the grown samples on the map are indicated by the open squares.

Image of FIG. 3.
FIG. 3.

Room-temperature intersubband absorption spectra of samples A24, A26, and A28. The same set of transitions, 1–2, 2–3, 1–3, and 2–4, is observed here for all the three samples. The observed energy shifts are consistent with the variation of the width of the narrow well. The vertical arrows indicate the individual absorption peaks. Transitions 2–4 and 1–4 are not resolved due to broadening. The three curves are shown with an offset for clarity, with the zero level for each curve indicated with the thin horizontal lines.

Image of FIG. 4.
FIG. 4.

Comparison of room-temperature intersubband absorption of sample A24–6 (thick line) and A24 (thin line). The vertical arrows (thick for A24–6 and thin for A24) indicate the individual absorption peaks.


Generic image for table
Table I.

Sample parameters.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near-infrared intersubband transitions in InGaAs–AlAs–InAlAs double quantum wells