Schematic cross-sectional (a) and top (b) views of the multiterminal device (not to scale).
Initial parts of CVC’s measured using different terminals [cf. Fig. 1(b)] for device 1 at 1.8 K. (a) Curves 1–3 are for the top NIS, bottom SIN junctions and for the SINIS device as a whole when feeding the current through leads 1 and 3 and reading the voltage between terminals 6 and 7 (curve 1), 5 and 6 (curve 2), and 5 and 7 (curve 3), respectively. (b) Curve 1 is for the top NIS junction (current terminals 2 and 3; voltage terminals 6 and 7); curves 2 and 3 are for the bottom SIN junction when feeding the current through leads 1 and 2 and reading the voltage between terminals 5 and 6 (curve 2) and 5 and 8 (curve 3). Bias setup is shown schematically in the right insets. The left inset shows dependence for the whole device [cf. curve 3 in panel (a)] and for the bottom junction (bias setup corresponds to that for curve 3 in this panel); the first dependence has higher lobes. Magnetic field, , is measured in units of the solenoid current, .
Dependence of the Josephson critical current through the SINIS junction, , on the injection current, , through the top junction for device 1 at 1.85 K (open circles) and for device 2 at 1.8 K (triangles); dependence vs the current along the film, , for device 2 at 1.8 K (squares). The direction of (and ) was fixed, whereas the direction of was switched. The open (solid) labels are for the same (opposite) directions of the bias, , and the injection, or , currents. The error of the measurement is within the label size.
(a) The CVC of the bottom junction, , for different levels of the current injection from the top junction. Curves 1–9 correspond to , respectively. (b) The CVC of the top junction, , at different levels of the current injection from the bottom junction, . Curves 1–9 correspond to , respectively. Biasing of the junctions is shown schematically in the insets.
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