Evolution of the temperature measured at the interface between the backside of the sample and the sample holder ( beneath the irradiated surface) after switching on the ion beam.
Evolution of nitrogen depth profiles for the current densities of 0.5, 0.67, and [(a), (b), and (c), respectively]. Curves 1–4 correspond to implanted total fluences of 4.4, 8.7, 13.1, and , respectively.
Typical NRA profile from sample , to illustrate the thickness of the nitrided layer and the thickness of the leading edge.
Nitrogen penetration depth as function of time for the current densities of 0.5, 0.67, and (curves 1–3, respectively). The lines joining the points are guides for the eyes.
NRA depth profiles obtained using 0.67 (a) and (b) current densities to implant without (curves 1) and with (curves 2) and (curves 3) pretreatment using .
The depth of the nitrided layer as a function of fluence for 0.5, 0.67, and [(a), (b), and (c), respectively]. The solid lines represent the fitting results using Eq. (3) with a diffusion coefficient that depends on temperature (with ) and on flux. The dashed curves represent the evolutions of the samples with slightly different temperature evolutions.
NRA nitrogen profiles for the current densities of 0.5 (a), 0.67 (b), and (c) as measured by NRA (dots), and fitted using Eqs. (9) and (10). The dashed curves represent the calculated nitrogen distribution profiles of the samples with the same but slightly different temperature evolutions.
NRA nitrogen depth profiles obtained at during (full symbols), and subsequent vacuum annealing at (empty symbols). The lines represent the fitted profiles using the model of trapping–detrapping.
Evolution of the surface concentration of the detrapped, trapped, and total amount of nitrogen for the current densities of 0.5 (a), 0.67 (b), and (c) as calculated using Eqs. (9) and (10).
Conditions at varied flux of ion nitriding.
Conditions for different pretreatments using bombardment.
Surface concentrations, nitrided layer depths and , total retained doses, retained doses at , and ratios between retained doses and implanted fluences for flux variation.
Surface concentrations, nitrided layer depths and , total retained doses, retained doses at , and ratios between retained doses and implanted fluences for variation of pretreatment.
The preexponential factors deduced from the analysis of the time evolution of the nitrided depth.
The preexponential factors obtained using fitting, full-profile fitting, and their ratio for the different current densities.
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