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Facet degradation of GaN heterostructure laser diodes
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10.1063/1.1929851
/content/aip/journal/jap/97/12/10.1063/1.1929851
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/12/10.1063/1.1929851
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM image showing the side view of a laser diode with mirror coatings. The cut through the laser diode was done by a focused ion beam.

Image of FIG. 2.
FIG. 2.

Graph showing the current through the laser diode vs the optical output power at a time with the corresponding threshold current and slope efficiency . The dotted line is a linear fit used to determine the threshold current and the slope efficiency at low optical output power.

Image of FIG. 3.
FIG. 3.

(a) Development of the threshold current over effective operation time of a laser diode operated in normal air at constant aging current (solid line). (b) Corresponding development of the optical output power of the laser diode over effective operation time.

Image of FIG. 4.
FIG. 4.

Development of the optical output power with time during the aging cycle of a mirror-coated laser diode at operation current.

Image of FIG. 5.
FIG. 5.

Scanning electron microscope picture of the facet of a laser diode operated at high currents after the appearance of a COD. The label mc points at the mirror coating.

Image of FIG. 6.
FIG. 6.

Development of the relative threshold current over effective operation time for laser diodes with mirror coatings (a) compared to uncoated laser diodes operated in dry air (b) and air with water vapor (c).

Image of FIG. 7.
FIG. 7.

SEM image of the facet of a laser diode, which was operated in dry air. The label points at the layers, AL at the active layers, and at the layers.

Image of FIG. 8.
FIG. 8.

SEM image of the facet of a laser diode, which was operated in air with water vapor. The label points at the -layers, AL at the active layers, and at the -layers.

Image of FIG. 9.
FIG. 9.

Development of the threshold current and the slope efficiency over effective operation time. The solid lines are fitted, with the assumption of (1) an increase of the internal losses and (2) an increase of both internal and mirror losses and .

Image of FIG. 10.
FIG. 10.

Image of the facet of a laser diode, which was operated in dry nitrogen. The label points at the -layers and at the -layers.

Image of FIG. 11.
FIG. 11.

curve for a laser diode operated in dry nitrogen after effective operation time each.

Image of FIG. 12.
FIG. 12.

Development of the threshold current over effective operation time of a laser diode which was operated first in air with water vapor (black squares) and then in dry air (open circles).

Image of FIG. 13.
FIG. 13.

Development of the threshold current over effective operation time of a laser diode, which was operated first in pure nitrogen (black squares) and then in dry air (open circles).

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/content/aip/journal/jap/97/12/10.1063/1.1929851
2005-06-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Facet degradation of GaN heterostructure laser diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/12/10.1063/1.1929851
10.1063/1.1929851
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