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Polarity-dependent forming in ion bombarded amorphous silicon memory devices
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10.1063/1.1832748
/content/aip/journal/jap/97/2/10.1063/1.1832748
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/2/10.1063/1.1832748
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Low-voltage characteristics for unbombarded MSM devices.

Image of FIG. 2.
FIG. 2.

Low-voltage characteristics for MSM devices bombarded with ions at implant energies of 20, 30, and , respectively.

Image of FIG. 3.
FIG. 3.

High-voltage plots for the (엯) 50-, (◻) 70-, and (◇) -thick devices for both the positive and negative forming pulses. The filled symbols are for the unbombarded devices.

Image of FIG. 4.
FIG. 4.

Electric field required to form 50-, 70-, and -thick Si-bombarded devices with positive and negative pulses on the top contact.

Image of FIG. 5.
FIG. 5.

Band diagram for a MSM structure with (a) positive bias and (b) negative bias on the top contact showing asymmetry in the energy deposition process. Energy deposition is much more pronounced at the top contact under the positive bias than it is under the negative bias.

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/content/aip/journal/jap/97/2/10.1063/1.1832748
2004-12-23
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polarity-dependent forming in ion bombarded amorphous silicon memory devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/2/10.1063/1.1832748
10.1063/1.1832748
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