Low-voltage characteristics for unbombarded MSM devices.
Low-voltage characteristics for MSM devices bombarded with ions at implant energies of 20, 30, and , respectively.
High-voltage plots for the (엯) 50-, (◻) 70-, and (◇) -thick devices for both the positive and negative forming pulses. The filled symbols are for the unbombarded devices.
Electric field required to form 50-, 70-, and -thick Si-bombarded devices with positive and negative pulses on the top contact.
Band diagram for a MSM structure with (a) positive bias and (b) negative bias on the top contact showing asymmetry in the energy deposition process. Energy deposition is much more pronounced at the top contact under the positive bias than it is under the negative bias.
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