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Characterization of layers and depth profile of their heterobipolar transistor structures by high-resolution x-ray diffractometry and computer simulations
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10.1063/1.1836008
/content/aip/journal/jap/97/2/10.1063/1.1836008
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/2/10.1063/1.1836008
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Rocking curve (o) recorded for symmetric (004) reflection along with the theoretical curve (solid line) simulated with uniform Ge content of 0.0955 along the depth of pseudomorphic SiGe layer for sample 1 with well-resolved intensity oscillations.

Image of FIG. 2.
FIG. 2.

Rocking curves recorded for a partially relaxed sample 2. Curves (a) and (b) are, respectively, for symmetric (004) and asymmetric (113) reflections.

Image of FIG. 3.
FIG. 3.

Plot (a) is the experimental rocking curve for sample 3 along with its theoretical curve (solid line) for (004) reflection obtained with the Ge depth profile given in plot (b) or the strain profile given in plot (c).

Image of FIG. 4.
FIG. 4.

Plot (a) is the experimental rocking curve for sample 4 along with its theoretical curve (solid line) for (004) reflection obtained with the Ge depth profile given in plot (b).

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/content/aip/journal/jap/97/2/10.1063/1.1836008
2004-12-27
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of Si1−xGex∕Si layers and depth profile of their heterobipolar transistor structures by high-resolution x-ray diffractometry and computer simulations
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/2/10.1063/1.1836008
10.1063/1.1836008
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