1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Silicon interstitial injection during dry oxidation of layers
Rent:
Rent this article for
USD
10.1063/1.1844606
/content/aip/journal/jap/97/3/10.1063/1.1844606
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/3/10.1063/1.1844606
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS B concentration profiles before and after dry oxidation at in RTO or FO for different process times of the silicon delta-doped reference sample (a) and the sample capped with an -thick layer (b).

Image of FIG. 2.
FIG. 2.

Interstitial supersaturation at the interface as a function of dry oxidation time at for the two samples with an layer at the surface with different Ge concentrations and for the reference sample without Ge.

Image of FIG. 3.
FIG. 3.

HRTEM image of the sample grown with an -thick on the top after dry oxidation at for . The SiGe layer, as a result of the oxidation, has reduced to a thickness of .

Loading

Article metrics loading...

/content/aip/journal/jap/97/3/10.1063/1.1844606
2005-01-14
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon interstitial injection during dry oxidation of SiGe∕Si layers
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/3/10.1063/1.1844606
10.1063/1.1844606
SEARCH_EXPAND_ITEM