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Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC
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10.1063/1.1844618
/content/aip/journal/jap/97/3/10.1063/1.1844618
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/3/10.1063/1.1844618

Figures

Image of FIG. 1.
FIG. 1.

(a) RBS channeling spectra of 4H–SiC implanted with varying fluences of ions. A random spectrum is also shown. (b) RBS channeling spectra of 4H–SiC implanted ions at different temperatures. The ion fluence in all the implantations was . (c) RBS channeling spectra of 4H–SiC implanted with varying fluxes of ions

Image of FIG. 2.
FIG. 2.

The PAS Doppler parameter as a function of positron implantation energy in the projected range region for (a) different fluences, (b) different implantation temperatures, and (c) different fluxes. Also indicated is the positron mean implantation depth.

Image of FIG. 3.
FIG. 3.

plot of Al implantations into 4H–SiC at different temperatures. The arrows indicate increasing positron implantation energy and the lines are guides to the eye. Also indicated in the figures is the surface annihilation state and the bulk state (1.0, 1.0).

Image of FIG. 4.
FIG. 4.

Damage production as a function of ion fluence for RT Al-implanted samples. (a) Normalized parameter from the projected range region. (b) Normalized parameter from the projected range region. Indicated in (a) and (b) are the characteristic and parameter levels for the and traps from Ref. 29. (c) Normalized RBS/channeling yield from the projected range region. Below the ion fluence of the backscattering yield approaches the virgin crystal yield. The dashed lines are guides to the eye.

Image of FIG. 5.
FIG. 5.

Damage production as a function of implantation temperature. All the solid symbols have been implanted with Al ions with the same flux. The open symbol point has been implanted with Si ions with approximately the same flux as the Al implantations. Figures (a) and (b) show the normalized and parameters from the projected range region, respectively. Figure (c) shows the normalized RBS channeling yield from the projected range region. The dashed lines are guides to the eye.

Image of FIG. 6.
FIG. 6.

Damage production as a function of ion flux for Si ion implantations. The implantations were done at a temperature of . Figures (a) and (b) show the normalized PAS Doppler parameters and and Fig. (c) shows the corresponding RBS channeling yield from the projected range region. The dashed lines are guides to the eye.

Tables

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Table I.

Summary of samples used in the study.

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/content/aip/journal/jap/97/3/10.1063/1.1844618
2005-01-06
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/3/10.1063/1.1844618
10.1063/1.1844618
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