(a) Doping profiles of disordered at different annealing temperatures using P:SOG. The solid line shows the concentration profiles for an as-grown sample annealed at . The profiles were extracted from room temperature measurements; and (b) the change in free carrier concentration, , for disordered sample relative to the as-grown sample at a depth of .
DLTS spectra measured from as-grown and disordered samples. In each case, disordering was carried out at for .
(a) DLTS spectrum depicting two prominent levels at and , which correspond to the two Cu-related acceptor levels in , and (b) PL spectra which demonstrate the presence of the transition between a donor and the Cu-related acceptor level. The spectra were measured from a sample disordered using PECVD at for .
(a) Arrhenius-like dependence of the peak intensity and concentration of HB2 in disordered samples. (b) Selected DLTS depth profile of HB2 in disordered at (open circles) or using P:SOG. The uniform distribution of HB2 was typical for other capping layers.
SIMS in-depth profile of a Zn buried marker layer in GaAs using either U:SOG or uncapped and annealed layer is shown in open circle. Disordering was carried out at for .
SIMS in-depth profiles of (a) Zn and (b) Al from a Zn buried marker layer grown in using either Ga: SOG or U:SOG. Disordering was carried out at for .
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