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Electrical characterization of epilayers disordered by doped spin-on-glass
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10.1063/1.1846140
/content/aip/journal/jap/97/3/10.1063/1.1846140
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/3/10.1063/1.1846140
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Figures

Image of FIG. 1.
FIG. 1.

(a) Doping profiles of disordered at different annealing temperatures using P:SOG. The solid line shows the concentration profiles for an as-grown sample annealed at . The profiles were extracted from room temperature measurements; and (b) the change in free carrier concentration, , for disordered sample relative to the as-grown sample at a depth of .

Image of FIG. 2.
FIG. 2.

DLTS spectra measured from as-grown and disordered samples. In each case, disordering was carried out at for .

Image of FIG. 3.
FIG. 3.

(a) DLTS spectrum depicting two prominent levels at and , which correspond to the two Cu-related acceptor levels in , and (b) PL spectra which demonstrate the presence of the transition between a donor and the Cu-related acceptor level. The spectra were measured from a sample disordered using PECVD at for .

Image of FIG. 4.
FIG. 4.

(a) Arrhenius-like dependence of the peak intensity and concentration of HB2 in disordered samples. (b) Selected DLTS depth profile of HB2 in disordered at (open circles) or using P:SOG. The uniform distribution of HB2 was typical for other capping layers.

Image of FIG. 5.
FIG. 5.

SIMS in-depth profile of a Zn buried marker layer in GaAs using either U:SOG or uncapped and annealed layer is shown in open circle. Disordering was carried out at for .

Image of FIG. 6.
FIG. 6.

SIMS in-depth profiles of (a) Zn and (b) Al from a Zn buried marker layer grown in using either Ga: SOG or U:SOG. Disordering was carried out at for .

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/content/aip/journal/jap/97/3/10.1063/1.1846140
2005-01-19
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization of p‐GaAs epilayers disordered by doped spin-on-glass
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/3/10.1063/1.1846140
10.1063/1.1846140
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