banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Electrical characterization of epilayers disordered by doped spin-on-glass
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

(a) Doping profiles of disordered at different annealing temperatures using P:SOG. The solid line shows the concentration profiles for an as-grown sample annealed at . The profiles were extracted from room temperature measurements; and (b) the change in free carrier concentration, , for disordered sample relative to the as-grown sample at a depth of .

Image of FIG. 2.
FIG. 2.

DLTS spectra measured from as-grown and disordered samples. In each case, disordering was carried out at for .

Image of FIG. 3.
FIG. 3.

(a) DLTS spectrum depicting two prominent levels at and , which correspond to the two Cu-related acceptor levels in , and (b) PL spectra which demonstrate the presence of the transition between a donor and the Cu-related acceptor level. The spectra were measured from a sample disordered using PECVD at for .

Image of FIG. 4.
FIG. 4.

(a) Arrhenius-like dependence of the peak intensity and concentration of HB2 in disordered samples. (b) Selected DLTS depth profile of HB2 in disordered at (open circles) or using P:SOG. The uniform distribution of HB2 was typical for other capping layers.

Image of FIG. 5.
FIG. 5.

SIMS in-depth profile of a Zn buried marker layer in GaAs using either U:SOG or uncapped and annealed layer is shown in open circle. Disordering was carried out at for .

Image of FIG. 6.
FIG. 6.

SIMS in-depth profiles of (a) Zn and (b) Al from a Zn buried marker layer grown in using either Ga: SOG or U:SOG. Disordering was carried out at for .


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization of p‐GaAs epilayers disordered by doped spin-on-glass