(a) AFM micrograph of a typical diamond grain with pyramidal geometry, (b) the location of the tunneling current measurement, and (c) the current image tunneling spectroscopic (CITS) map of the pyramidal grains with the diamond films biased at [the darker sports represent larger electron field emission current from diamond films to -tip].
The tunneling current–voltage properties of (a) the flat surfaces of the pyramidal diamond grains and (b) the steps surrounding these flat surfaces, for the locations indicated in Fig. 1(b).
(a) AFM micrograph of a typical nanodiamond films and (b) the current image tunneling spectroscopic (CITS) map of the nanodiamond films with the diamond films biased at [the darker sports represent larger field emission current from diamond films to -tip].
(a) Raman spectroscopies and (b) electron field emission properties of nano-diamond films doped with species, which were designated as B1–B4 [the inset in (b) shows Fowler–Nordheim plots of the curves].
(a) The tunneling current–voltage characteristics and (b) the corresponding derivatives of tunneling current, , for boron-doped nanodiamond films measured by STM techniques with tip–to–film gap set to at .
The field emission current–voltage characteristics for boron-doped nanodiamond films measured by STM technique with tip–to–film gap set at .
(a) The average electron field emission characteristics and , (b) the emission gap , and (c) the local electron field emission behavior and , of boron-doped nanocrystalline diamond films.a
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