1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams
Rent:
Rent this article for
USD
10.1063/1.1845575
/content/aip/journal/jap/97/4/10.1063/1.1845575
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/4/10.1063/1.1845575
/content/aip/journal/jap/97/4/10.1063/1.1845575
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/jap/97/4/10.1063/1.1845575
2005-01-24
2014-11-29
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/4/10.1063/1.1845575
10.1063/1.1845575
SEARCH_EXPAND_ITEM