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Monte Carlo investigation of current voltage and avalanche noise in GaN double-drift impact diodes
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10.1063/1.1853498
/content/aip/journal/jap/97/4/10.1063/1.1853498
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/4/10.1063/1.1853498

Figures

Image of FIG. 1.
FIG. 1.

Steady-state characteristic of the homojunction IMPATT diode in Table I at . Solid curve shows the characteristic calculated for the full model of the device. The dashed curve is obtained when carrier multiplication by impact ionization is neglected, and the current is induced by band to band Zener tunneling process.

Image of FIG. 2.
FIG. 2.

Current multiplication factor vs bias voltage. The multiplication factor is obtained from the results presented in Fig. 1 in accordance with Eq. (20).

Image of FIG. 3.
FIG. 3.

Potential profile (solid line) and distribution of carrier kinetic energy (points) for an applied voltage of in the diode under test.

Image of FIG. 4.
FIG. 4.

Current density vs time in the diode under test biased at and , respectively. The results of Monte Carlo simulations are obtained at .

Image of FIG. 5.
FIG. 5.

Decomposition of the autocorrelation function (a) and spectral density (b) of current fluctuations in the diode under test for an average dc density at and .

Image of FIG. 6.
FIG. 6.

Decomposition of the autocorrelation function (a) and spectral density (b) of current fluctuations in the diode under test for an average dc density at and .

Image of FIG. 7.
FIG. 7.

Correlation functions and spectral densities of current fluctuations in the diode under test obtained when carrier multiplication is neglected. The diode is biased at , the average dc density is and .

Image of FIG. 8.
FIG. 8.

Autocorrelation function (a) and spectral density (b) of current fluctuations in the diode under test for an average dc density . Calculations are performed for a static, i.e., nonfluctuating potential distribution, at and .

Image of FIG. 9.
FIG. 9.

Autocorrelation function (a) and spectral density (b) of current fluctuations in the diode under test for an average dc density . Calculations are performed for a static potential distribution at and .

Image of FIG. 10.
FIG. 10.

(a) Amplitude of the current correlation functions obtained from the simulations under static (full square) and dynamic (full circles) conditions vs the steady current for the IMPATT diode under test. (b) Different times scales relevant to current fluctuations vs the steady current for the IMPATT diode under test. Full squares refer to the static correlation time, full circle to the dynamic correlation time and full triangles to the differential dielectric relaxation time of the diode. Curves are guide to the eyes.

Image of FIG. 11.
FIG. 11.

Low-frequency value of spectral density of current fluctuations in the IMPATT diode under test vs the dc density flowing through the device. Open (solid) circles refer to the case in which the instantaneous fluctuations of the self-consistent potential distribution are considered (neglected) in the simulation. Dashed curve shows the theoretical with the multiplication factor obtained from Fig. 2. Continuous curves are guides to the eye.

Tables

Generic image for table
Table I.

Structure of the diode.

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/content/aip/journal/jap/97/4/10.1063/1.1853498
2005-01-28
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Monte Carlo investigation of current voltage and avalanche noise in GaN double-drift impact diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/4/10.1063/1.1853498
10.1063/1.1853498
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