Schematic outline of mass-analyzed ion beam apparatus used in this study.
Etch yield of SiN for ions as a function of ion energy. Those for ions, whose etching mechanism is physical sputtering, and those for ions, whose mechanism is typical ion-enhanced chemical sputtering, are also shown for comparison. Open symbols represent value of steady state and shaded closed symbols represent average value involving transient behaviors.
Normalized etch yield of SiN and for and of . Normalized etch yield is defined as removed Si atoms per F atoms in incident ions.
Etch yield of SiN (solid lines) and (dotted lines) for and ions as a function of ion energy.
Surface profile after ion irradiation on SiN at . Flat plane at back shows initial surface before irradiation.
Change in SiN thickness with ion irradiation as a function of ion dosage.
Change in SiN thickness with ion irradiation at different ion energies as a function of ion dosage.
XPS spectra of C region measured at SiN surface with different dosages of irradiation.
TEM image of SiN surface after ion irradiation. layer was deposited as marked layer in preparation of TEM sample.
Atomic composition of each layer in TEM image after EDX analysis.
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