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Mass-analyzed ion beam study on selectivity of -to-SiN etching and film deposition
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Image of FIG. 1.
FIG. 1.

Schematic outline of mass-analyzed ion beam apparatus used in this study.

Image of FIG. 2.
FIG. 2.

Etch yield of SiN for ions as a function of ion energy. Those for ions, whose etching mechanism is physical sputtering, and those for ions, whose mechanism is typical ion-enhanced chemical sputtering, are also shown for comparison. Open symbols represent value of steady state and shaded closed symbols represent average value involving transient behaviors.

Image of FIG. 3.
FIG. 3.

Normalized etch yield of SiN and for and of . Normalized etch yield is defined as removed Si atoms per F atoms in incident ions.

Image of FIG. 4.
FIG. 4.

Etch yield of SiN (solid lines) and (dotted lines) for and ions as a function of ion energy.

Image of FIG. 5.
FIG. 5.

Surface profile after ion irradiation on SiN at . Flat plane at back shows initial surface before irradiation.

Image of FIG. 6.
FIG. 6.

Change in SiN thickness with ion irradiation as a function of ion dosage.

Image of FIG. 7.
FIG. 7.

Change in SiN thickness with ion irradiation at different ion energies as a function of ion dosage.

Image of FIG. 8.
FIG. 8.

XPS spectra of C region measured at SiN surface with different dosages of irradiation.

Image of FIG. 9.
FIG. 9.

TEM image of SiN surface after ion irradiation. layer was deposited as marked layer in preparation of TEM sample.


Generic image for table
Table I.

Atomic composition of each layer in TEM image after EDX analysis.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mass-analyzed CFx+(x=1,2,3) ion beam study on selectivity of SiO2-to-SiN etching and a-C:F film deposition