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The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001)
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10.1063/1.1858054
/content/aip/journal/jap/97/5/10.1063/1.1858054
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/5/10.1063/1.1858054

Figures

Image of FIG. 1.
FIG. 1.

Scanning tunneling micrograph of the GaAs (001) surface (image size ; and ).

Image of FIG. 2.
FIG. 2.

Scanning tunneling micrograph after MOVPE of InAs on GaAs for 14 s (image size ; and ).

Image of FIG. 3.
FIG. 3.

Scanning tunneling micrograph after MOVPE of InAs on GaAs for 18 s (image size ; and ).

Image of FIG. 4.
FIG. 4.

Line scans of the STM image in Fig. 3 across , and .

Image of FIG. 5.
FIG. 5.

Scanning tunneling micrograph after MOVPE of InAs on GaAs for 12 s with a 50% increase in TMIn feed rate (image size ; and ).

Image of FIG. 6.
FIG. 6.

Line scans of the STM image in Fig. 5 across and .

Image of FIG. 7.
FIG. 7.

Scanning tunneling micrograph after MOVPE of InAs on for 10 s (image size ; and ).

Image of FIG. 8.
FIG. 8.

Scanning tunneling micrograph after MOVPE of InAs on for 14 s (large image size: ; small image size ; and ).

Image of FIG. 9.
FIG. 9.

Line scans of the STM image in Fig. 8 across and .

Image of FIG. 10.
FIG. 10.

Scanning tunneling micrograph after MOVPE of InAs on for 18 s (image size ; and ).

Image of FIG. 11.
FIG. 11.

The dependence of the normalized photoemission intensity on the amount of InAs deposited on the GaAs (001) surface.

Tables

Generic image for table
Table I.

The surface atomic percentage and estimated overlayer thickness.a

Generic image for table
Table II.

Binding energies of the elements on the sample surfaces.

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/content/aip/journal/jap/97/5/10.1063/1.1858054
2005-02-08
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001)
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/5/10.1063/1.1858054
10.1063/1.1858054
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