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Er-doped ZnO thin films grown by pulsed-laser deposition
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10.1063/1.1858058
/content/aip/journal/jap/97/5/10.1063/1.1858058
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/5/10.1063/1.1858058

Figures

Image of FIG. 1.
FIG. 1.

Rutherford backscattering spectra for 1.5 MeV ions incident on Er-doped ZnO films grown at 700 °C under oxygen pressure by pulsed laser ablation of targets whose Er-doping level is 0.6% (hollow circle) and 2% (solid circle), respectively.

Image of FIG. 2.
FIG. 2.

UV-visible absorption spectrum and corresponding Tauc plot (in insert) for a (2%) film grown at 700 °C under oxygen pressure.

Image of FIG. 3.
FIG. 3.

Normalized x-ray diffraction patterns for (2%) films grown at various temperature under oxygen pressure.

Image of FIG. 4.
FIG. 4.

Normalized x-ray diffraction patterns for (2%) films grown at 750 °C under various oxygen pressures.

Image of FIG. 5.
FIG. 5.

Normalized x-ray diffraction patterns for ZnO films grown at 700 °C and with various Er concentrations.

Image of FIG. 6.
FIG. 6.

Evolution of the AFM images with the temperature, the pressure, and the Er-doping rate.

Image of FIG. 7.
FIG. 7.

Photoluminescence spectra of Er-doped and ZnO films grown in similar conditions, (700 °C and ).

Image of FIG. 8.
FIG. 8.

Evolution of the PL spectrum of (2%) films grown at various temperatures under oxygen pressure.

Image of FIG. 9.
FIG. 9.

Evolution of the PL spectrum of (2%) films grown at 750 °C under various oxygen pressures.

Image of FIG. 10.
FIG. 10.

Evolution of the PL spectrum of (2%) films grown at 700 °C and oxygen pressure, with various Er concentrations.

Tables

Generic image for table
Table I.

parameter calculated from the (00.2) peak position, Rocking Curve FWHM, and rms roughness of ZnO films grown under various conditions of temperature, pressure, and Er-doping rate. Two samples with the same deposition conditions (labeled *) are presented in order to get an estimation of the precision of the experimental results.

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/content/aip/journal/jap/97/5/10.1063/1.1858058
2005-02-11
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Er-doped ZnO thin films grown by pulsed-laser deposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/5/10.1063/1.1858058
10.1063/1.1858058
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