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Stress evolution during and after sputter deposition of Cu thin films onto Si (100) substrates under various sputtering pressures
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10.1063/1.1858062
/content/aip/journal/jap/97/5/10.1063/1.1858062
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/5/10.1063/1.1858062

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the experimental setup dedicated to in situ stress measurement during sputter deposition of single thin films and multilayers: (1) laser diode, (2) fiber-optic cable, (3) collimating system, (4) beam splitter, (5) mirror, (6) optical window, (7) substrate, (8) mask, (9) automatic shutters, (10) targets, and (11) position-sensitive detectors on a translation stage.

Image of FIG. 2.
FIG. 2.

The evolution of the intrinsic force per unit width during and after sputter deposition of Cu films with a final thickness of about 300 nm and deposited with a rate of at various sputtering pressures as indicated. The thermal component is corrected.

Image of FIG. 3.
FIG. 3.

The evolution of the average intrinsic stress during and after sputter deposition of Cu films with a final thickness of about 300 nm and deposited with a rate of at various sputtering pressures as indicated. The thermal contribution is corrected.

Image of FIG. 4.
FIG. 4.

The evolution of during the early stage of deposition of Cu thin films deposited at a rate of and with different values of the sputtering pressure using (a) the slow mode (values taken from Fig. 2) with a measuring rate of 1.2 nm per measuring point and (b) the rapid mode with a measuring rate of 0.05 nm per measuring point.

Image of FIG. 5.
FIG. 5.

The microstructure development as a function of sputtering pressure of Cu films with a thickness of 300 nm and deposited at a rate of : (a) top-view FIB images, (b) cross-sectional view FIB images, and (c) SEM images.

Image of FIG. 6.
FIG. 6.

The AFM 3D images of Cu films with a thickness of about 300 nm and deposited with a rate of at various sputtering pressures: (a) 0.05, (b) 0.2, (c) 0.5, (d) 2, and (e) 6 Pa.

Image of FIG. 7.
FIG. 7.

The intrinsic stress measured at the end of the deposition of Cu films with a final thickness of about 300 nm and deposited at a deposition rate of as a function of sputtering pressure.

Tables

Generic image for table
Table I.

The results of microstructure investigations and resistivity data of Cu films with a thickness of about 300 nm and deposited with a rate of at various sputtering pressures as indicated. The surface roughness is represented by root mean square (rms) value determined over area of AFM image.

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/content/aip/journal/jap/97/5/10.1063/1.1858062
2005-02-15
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stress evolution during and after sputter deposition of Cu thin films onto Si (100) substrates under various sputtering pressures
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/5/10.1063/1.1858062
10.1063/1.1858062
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