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Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited films and silicon substrate surface roughness on surface passivation
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10.1063/1.1861138
/content/aip/journal/jap/97/6/10.1063/1.1861138
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/6/10.1063/1.1861138
/content/aip/journal/jap/97/6/10.1063/1.1861138
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/content/aip/journal/jap/97/6/10.1063/1.1861138
2005-03-04
2015-08-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiNx films and silicon substrate surface roughness on surface passivation
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/6/10.1063/1.1861138
10.1063/1.1861138
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