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Conduction mechanisms in ion-irradiated layers
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10.1063/1.1861966
/content/aip/journal/jap/97/6/10.1063/1.1861966
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/6/10.1063/1.1861966
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Sheet carrier concentration of vs fluence for and -irradiations with error bars. The solid line represents the sheet carrier concentration for the unirradiated material. The dashed line represents the linear variation of the carrier concentration in the irradiated samples with the fluence.

Image of FIG. 2.
FIG. 2.

Hall mobility and capture time measurements vs fluence for irradiation with error bars. The long-dashed line represents the linear evolution of the relaxation time with the irradiation dose. The short-dashed line represents the fit of the mobility evolution to the model described by Eq. (13) .

Image of FIG. 3.
FIG. 3.

Sheet carrier concentration vs fluence for and irradiations after annealing with error bars. The solid line represents the sheet carrier concentration of the nonirradiated material but annealed at . The dashed curve represents the linear evolution of the sheet carrier concentration of the -irradiated samples.

Image of FIG. 4.
FIG. 4.

Hall mobility measurements vs irradiation dose for -irradiated samples annealed with different annealing temperatures with error bars. The solid line and the dashed line represent the fit of the mobility evolution with the model described by the Eq. (13), for the case (respectively, case) (respectively, ) is negligible.

Image of FIG. 5.
FIG. 5.

Normalized photocurrent spectra for different samples: nonirradiated, irradiated with protons at dose, irradiated at gold-ion dose, and irradiated with protons at dose and annealed at . The dashed curve represents the fit of the photocurrent under the band-gap energy with the Urbach law (see Ref. 23 ).

Image of FIG. 6.
FIG. 6.

Hall mobility and capture time measurements vs irradiation fluence in -irradiated unannealed samples with error bars. The solid line represents the fit of the mobility evolution with the model described by the Eq. (1). The dashed line represents the linear evolution of the relaxation time with the irradiation dose.

Image of FIG. 7.
FIG. 7.

Hall mobility measurements vs irradiation dose for -irradiated samples annealed with different annealing temperatures with error bars. The solid lines represent the fits of the mobility evolution with the model described by the Eq. (1).

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/content/aip/journal/jap/97/6/10.1063/1.1861966
2005-03-11
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Conduction mechanisms in ion-irradiated InGaAs layers
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/6/10.1063/1.1861966
10.1063/1.1861966
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