patterns around the 004 reflection for heterostructures grown on (a) an substrate implanted with implantation at and preannealed at and (b) a conventional substrate. Arrows indicate the position of the zero-order superlattice peak position. Simulations are also shown below the measured curves (curves c and d). The curves are vertically shifted for clarity.
Relaxation of heterostructures grown on virgin substrates and substrates implanted with at and preannealed at . The continuous lines are linear fits to the nonzero values for each data set.
TEM micrograph of same sample as in Fig. 1(a) with near the orientation.
TEM micrograph of a heterostructure that has relaxed by forming a dislocation between the cavities region and the bottom of the heterostructure.
Low-temperature optical absorption for two different structures each grown on a conventional substrate and an implanted substrate. The relaxation value is indicated. The samples consist of (a) grown on a conventional substrate, (b) grown on an implanted substrate, (c) grown on a conventional substrate, and (d) and grown on an implanted substrate.
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