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III-V compliant substrates implemented by nanocavities introduced by ion implantation
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View: Figures


Image of FIG. 1.
FIG. 1.

patterns around the 004 reflection for heterostructures grown on (a) an substrate implanted with implantation at and preannealed at and (b) a conventional substrate. Arrows indicate the position of the zero-order superlattice peak position. Simulations are also shown below the measured curves (curves c and d). The curves are vertically shifted for clarity.

Image of FIG. 2.
FIG. 2.

Relaxation of heterostructures grown on virgin substrates and substrates implanted with at and preannealed at . The continuous lines are linear fits to the nonzero values for each data set.

Image of FIG. 3.
FIG. 3.

TEM micrograph of same sample as in Fig. 1(a) with near the orientation.

Image of FIG. 4.
FIG. 4.

TEM micrograph of a heterostructure that has relaxed by forming a dislocation between the cavities region and the bottom of the heterostructure.

Image of FIG. 5.
FIG. 5.

Low-temperature optical absorption for two different structures each grown on a conventional substrate and an implanted substrate. The relaxation value is indicated. The samples consist of (a) grown on a conventional substrate, (b) grown on an implanted substrate, (c) grown on a conventional substrate, and (d) and grown on an implanted substrate.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: III-V compliant substrates implemented by nanocavities introduced by ion implantation