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Growth of ferromagnetic semiconductor films on (111) by ionized cluster beam deposition
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View: Figures


Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns of (222) refraction for films grown using neutral clusters at different substrate temperatures. The inset shows the pattern of the film grown at

Image of FIG. 2.
FIG. 2.

X-ray diffraction patterns of (222) refraction for films grown by different acceleration voltages of ionized GeTe cluster at .

Image of FIG. 3.
FIG. 3.

Acceleration voltage of GeTe or MnTe ionized clusters dependence of FWHM of x-ray scan for films. The closed circles and triangles show the films grown using ionized MnTe or GeTe clusters at , respectively. The open circles show FWHM of the film grown using neutral clusters at .

Image of FIG. 4.
FIG. 4.

High-resolution SEM images of surface morphology of films. (a) 1384: neutral GeTe and MnTe clusters at , (b) I415: ionized MnTe cluster at , , and , and (c) 1439: ionized GeTe cluster at , , and .

Image of FIG. 5.
FIG. 5.

Magnetization curves deduced from magnetotransport measurements at . The magnetic field was applied perpendicular to the film plane.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of ferromagnetic semiconductor Ge1−xMnxTe films on BaF2 (111) by ionized cluster beam deposition