1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Ultrathin epitaxial films grown on investigated by tunneling spectroscopy and microscopy
Rent:
Rent this article for
USD
10.1063/1.1876580
/content/aip/journal/jap/97/8/10.1063/1.1876580
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/8/10.1063/1.1876580
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Large area STM scan of an -covered film (, gray scale , roughness , , and ). The height difference between the large terraces is corresponding to the atomic step height on the films. (b) Enlarged view of a subregion of (a) (, gray scale , and roughness ). The roughness within a single terrace (about ) is larger than within an atomically flat terrace. (c) STM image of another sample showing small islands (, gray scale , and roughness ). These islands have an average height of , which is close to the height of steps. The average width of the island is .

Image of FIG. 2.
FIG. 2.

spectra of an -covered film: (a) locally determined differential conductivity measured for different tip-sample separations. The arrows indicate the change of the conductivity due to decreasing tip-sample distances. The dotted curve gives an example of the often observed case that a broad shoulder develops from the lower conduction-band edge into the band-gap region. (b) Normalized conductivity calculated from the average of single curves which have been acquired equally distributed across an area of . The energy of the small peaks (signatures) matches the energy of the critical points in the bulk band structure of and has been labeled accordingly.

Image of FIG. 3.
FIG. 3.

(a) spectra of an -covered film. Exemplary calculated from a curve (solid curve, left scale) and, for comparison, measured while scanning another ramp (dashed curve, right scale). The peaks of at around are interpreted as being due to the band edges of the or corresponding to a band gap of as expected. (b) Energy scheme of the system vacuum tip at zero bias. Conduction-band edge (CBE) and valence-band edge (VBE) indicate the conduction- and the valence-band edges of the oxide, respectively. denotes the observed defect states within the band gap of the oxide.

Image of FIG. 4.
FIG. 4.

A sequence of small area scans of an -covered film ( and gray scale ) taken at dc tunneling voltages of 0, 0.5, 1.0, 1.5, 2.0, and . Additionally to the dc bias, an ac tunneling voltage of was applied. The growing density of hillocks for increasing dc tunneling voltages is clearly visible.

Loading

Article metrics loading...

/content/aip/journal/jap/97/8/10.1063/1.1876580
2005-04-04
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrathin epitaxial Al2O3 films grown on Nb(110)∕sapphire(0001) investigated by tunneling spectroscopy and microscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/8/10.1063/1.1876580
10.1063/1.1876580
SEARCH_EXPAND_ITEM