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Effect of strain relaxation and exciton localization on performance of quaternary light-emitting diodes
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10.1063/1.1877816
/content/aip/journal/jap/97/8/10.1063/1.1877816
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/8/10.1063/1.1877816
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of the quantum-well structures with one, three, five, and ten periods, measured under an excitation of at room temperature.

Image of FIG. 2.
FIG. 2.

An high-resolution XRD scan of the ten-period MQW structure. The experimental curve and the simulated curve based on the dynamic theory are given.

Image of FIG. 3.
FIG. 3.

Temperature-dependent PL spectra of the SQW structure. The dots are guides for the eye.

Image of FIG. 4.
FIG. 4.

Temperature-dependent PL spectra of the MQW structure. The dots are guides for the eye.

Image of FIG. 5.
FIG. 5.

Variation of emission energy of the SQW and ten-period MQW structures as a function of temperature. Both show a clear temperature-induced blueshift between 70 and .

Image of FIG. 6.
FIG. 6.

(a) the typical electroluminescence spectra of both LEDs under injection current and (b) the optical power of the SQW and MQW UV-LEDs as a function of injection current.

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/content/aip/journal/jap/97/8/10.1063/1.1877816
2005-04-12
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of strain relaxation and exciton localization on performance of 350-nmAlInGaN quaternary light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/8/10.1063/1.1877816
10.1063/1.1877816
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