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Temperature dependence of the ambipolar carrier migration in a structure with quantum dots grown in a strained quantum well
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10.1063/1.1877817
/content/aip/journal/jap/97/9/10.1063/1.1877817
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/9/10.1063/1.1877817

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of the ambipolar spreading distance for carriers recombining in the ground and the first excited state of an QD layer embedded in a strained QW. The pumping wavelength is and the optical pumping does not generate enough carriers to saturate the dot ground state.

Tables

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Table I.

Spreading lengths measured in different QD structures. Pump photon wavelength is mentioned in the first column, in parentheses, below the sample description.

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/content/aip/journal/jap/97/9/10.1063/1.1877817
2005-04-18
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of the ambipolar carrier migration in a structure with InAs quantum dots grown in a strained GaInAs quantum well
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/9/10.1063/1.1877817
10.1063/1.1877817
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