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High mobility electron-transport material based on 2,5-dibenzthiazolyl thiophene
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View: Figures


Image of FIG. 1.
FIG. 1.

The time-of-flight current transient for TBZT, featuring the dispersive transients. Note that transit time was taken as the point of intersection of the linear asymptotes. Inset shows the experimental field dependence Poole–Frenkel fits for the electron mobility.

Image of FIG. 2.
FIG. 2.

The electron-density mapping of HOMO and LUMO in the anionic form of TBZT using AM1–CI computational level. LUMO level has the electron density delocalized over the adjacent to the olefin double bond making the structure rigid in the excited state.

Image of FIG. 3.
FIG. 3.

Current–voltage characteristics of the conventional bilayer device, showing a threshold voltage of .

Image of FIG. 4.
FIG. 4.

The electroluminescent spectra of the device structures having configurations ITO∕TPD ∕ZBZT (closed symbols) and ITO∕TPD ∕ZBZT ∕TBZT (open symbols). A shift of about is observed when TBZT is employed as an electron-transport layer. Inset to Fig. 4 shows the current–voltage characteristics of the device structure with and without a TBZT layer structure in the EL emission. Note the drastic reduction in the threshold voltage of the device structure with the introduction of TBZT in the device structure attributed to the electron-transport ability of TBZT.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High mobility electron-transport material based on 2,5-dibenzthiazolyl thiophene