(a) Dependence of the growth yield due to on the ion flux density (data points). from Eq. (3) and from Eq. (6) are shown as lines; (b) Nonreduced and recombination-reduced dangling-bond coverages according to Eqs. (2) and (5).
Visualization of the restricted area around a dangling bond for the simple case of a hexagonal arrangement of surface sites: (a) If a new dangling bond is created within the restricted area (gray and open circles) of dangling bond (1), e.g., in position (2), (1) and (2) will recombine. In contrast, a new dangling bond (3) will survive. (b) The restricted areas of two dangling bonds (1) and (2) can overlap, the sites marked with a cross belong to both restricted areas.
Dangling-bond coverage as a function of the number of ions impinging on a total of 10 000 surface sites calculated analytically without db recombination (dotted), with db combination (dashed), and calculated by a Monte Carlo simulation (solid). For simplicity it is assumed that each ion produces one db, i.e., .
Comparison between the dependences of the chemical sputtering yield due to (solid squares, right hand scale) and the growth yield due to (open circles, left hand scale) on the ratio of the flux densities of H and . Dashed line: Growth yield according to Eq. (10); solid line: Model of the flux dependence of chemical sputtering, Eq. (11); the dotted line indicates the zero of the right hand scale.
(a) Energy dependence of the refractive index of films grown due to (solid symbols), (open symbols), and (triangle). The dashed lines are intended to guide the eye. (b) Displaced hydrogen atoms per nm depth interval and incoming ion calculated with TRIM.SP for 5, 25, 50, 100, 200, and energy. The corresponding energies are indicated in the figure. The shaded area symbolizes the range of H atoms.
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