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Characteristics of quantum dots grown on tensile-strained
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10.1063/1.1884249
/content/aip/journal/jap/97/9/10.1063/1.1884249
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/9/10.1063/1.1884249

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of double stack QD laser structure with barriers.

Image of FIG. 2.
FIG. 2.

Room-temperature PL characteristics for single stack QD structures with and barriers.

Image of FIG. 3.
FIG. 3.

Size distribution data for QD on measured using AFM. (a) QD on (b) QD on .

Image of FIG. 4.
FIG. 4.

Low-temperature PL characteristics of single stack QD structures with and barriers.

Image of FIG. 5.
FIG. 5.

Ground-state PL peak intensity as a function of temperature for and barriers.

Image of FIG. 6.
FIG. 6.

Wavelength of QD ground-state transition as a function of content of the barriers and temperature.

Image of FIG. 7.
FIG. 7.

AFM images for QDs on . (a) QDs on (b) QDs on (c) QDs on .

Image of FIG. 8.
FIG. 8.

TEM image of double-stacked QD laser structure with barriers.

Image of FIG. 9.
FIG. 9.

QD PL intensity comparison for samples with various interruption times after the spacer layer growth.

Tables

Generic image for table
Table I.

Summary of AFM measurements of QDs grown on and .

Generic image for table
Table II.

Summary of device results for double stack QD laser structures with QDs grown on and barriers.

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/content/aip/journal/jap/97/9/10.1063/1.1884249
2005-04-21
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of InGaAs quantum dots grown on tensile-strained GaAs1−xPx
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/9/10.1063/1.1884249
10.1063/1.1884249
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