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Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich
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10.1063/1.1886274
/content/aip/journal/jap/97/9/10.1063/1.1886274
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/9/10.1063/1.1886274
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of the (a) -type Si substrate, (b) sample, and the samples in (c) as-implanted condition, or annealed at 1100 °C for (d) 30 min, (e) 60 min, (f) 180 min, and (g) 240 min.

Image of FIG. 2.
FIG. 2.

hysteresis measurement of the MOS diode made on (a) as-implanted and (b) annealed at 1100 °C for 180 min.

Image of FIG. 3.
FIG. 3.

EPR spectrum of the as-grown and 180-min-annealed .

Image of FIG. 4.
FIG. 4.

Left: central wavelength of the three principal PL peaks in as implanted or annealed at 1100 °C for different annealing time. Right: annealing-time-dependent PL intensities at different wavelengths of 415, 455, and 520 nm.

Image of FIG. 5.
FIG. 5.

PL spectra of the PECVD-grown Si-rich in (a) as-grown condition, or annealed at 1100 °C for (b) 15 min, (c) 30 min, (d) 60 min, (e) 120 min, and (f) 180 min.

Image of FIG. 6.
FIG. 6.

High-resolution TEM of the 30-min-annealed PECVD-grown Si-rich sample.

Image of FIG. 7.
FIG. 7.

Annealing-time-dependent PL intensity (solid) and size (dashed) of nc-Si. Inset: the normalized PL intensity for the annealed PECVD-grown Si-rich samples.

Image of FIG. 8.
FIG. 8.

and (inset) responses of EL from the MOS diode.

Image of FIG. 9.
FIG. 9.

Far-field EL patterns of the MOS diode at different bias voltages of 3.8 V (left), 12 V (middle), and 15 V (right). Lower part: the bright edge-emitting far-field pattern of the MOS diode at bias of 12 V.

Image of FIG. 10.
FIG. 10.

Normalized PL (dashed) and EL (solid) spectra of the 180-min-annealed and the MOS diode at bias current of 15 V.

Image of FIG. 11.
FIG. 11.

and (inset) responses of the -rich MOS diode.

Image of FIG. 12.
FIG. 12.

Far-field EL pattern of the -rich MOS diode biased at 100 V.

Image of FIG. 13.
FIG. 13.

Normalized PL (solid) and EL (square dotted) spectra of the 30-min-annealed PECVD-grown Si-rich and the -rich MOS diode biased at 100 V. The decomposed EL components at 625 and 768 nm are shown (dashed).

Image of FIG. 14.
FIG. 14.

The cold-carrier tunneling mechanism happened in high-excited states between adjacent nc-Si quantum dots in the -rich MOS structure.

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/content/aip/journal/jap/97/9/10.1063/1.1886274
2005-04-20
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2
http://aip.metastore.ingenta.com/content/aip/journal/jap/97/9/10.1063/1.1886274
10.1063/1.1886274
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