PL spectra of the (a) -type Si substrate, (b) sample, and the samples in (c) as-implanted condition, or annealed at 1100 °C for (d) 30 min, (e) 60 min, (f) 180 min, and (g) 240 min.
hysteresis measurement of the MOS diode made on (a) as-implanted and (b) annealed at 1100 °C for 180 min.
EPR spectrum of the as-grown and 180-min-annealed .
Left: central wavelength of the three principal PL peaks in as implanted or annealed at 1100 °C for different annealing time. Right: annealing-time-dependent PL intensities at different wavelengths of 415, 455, and 520 nm.
PL spectra of the PECVD-grown Si-rich in (a) as-grown condition, or annealed at 1100 °C for (b) 15 min, (c) 30 min, (d) 60 min, (e) 120 min, and (f) 180 min.
High-resolution TEM of the 30-min-annealed PECVD-grown Si-rich sample.
Annealing-time-dependent PL intensity (solid) and size (dashed) of nc-Si. Inset: the normalized PL intensity for the annealed PECVD-grown Si-rich samples.
and (inset) responses of EL from the MOS diode.
Far-field EL patterns of the MOS diode at different bias voltages of 3.8 V (left), 12 V (middle), and 15 V (right). Lower part: the bright edge-emitting far-field pattern of the MOS diode at bias of 12 V.
Normalized PL (dashed) and EL (solid) spectra of the 180-min-annealed and the MOS diode at bias current of 15 V.
and (inset) responses of the -rich MOS diode.
Far-field EL pattern of the -rich MOS diode biased at 100 V.
Normalized PL (solid) and EL (square dotted) spectra of the 30-min-annealed PECVD-grown Si-rich and the -rich MOS diode biased at 100 V. The decomposed EL components at 625 and 768 nm are shown (dashed).
The cold-carrier tunneling mechanism happened in high-excited states between adjacent nc-Si quantum dots in the -rich MOS structure.
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