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Annealing effects on the temperature dependence of photoluminescence characteristics of GaAsSbN single-quantum wells
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10.1063/1.1931032
/content/aip/journal/jap/98/1/10.1063/1.1931032
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/1/10.1063/1.1931032
/content/aip/journal/jap/98/1/10.1063/1.1931032
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/content/aip/journal/jap/98/1/10.1063/1.1931032
2005-07-06
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Annealing effects on the temperature dependence of photoluminescence characteristics of GaAsSbN single-quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/1/10.1063/1.1931032
10.1063/1.1931032
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