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Annealing effects on the temperature dependence of photoluminescence characteristics of GaAsSbN single-quantum wells
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10.1063/1.1931032
/content/aip/journal/jap/98/1/10.1063/1.1931032
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/1/10.1063/1.1931032

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of ex situ annealed sample E7 in N ambient at various temperatures.

Image of FIG. 2.
FIG. 2.

PL spectra of in situ annealed samples (a) I6 and (b) I7 in As ambient at various temperatures.

Image of FIG. 3.
FIG. 3.

Variation of the PL peak energy as a function of temperature in and quantum wells: reference sample R (a, ▴), ex situ annealed sample E7 (a, ◻), in situ annealed sample I6 (b, •), and in situ annealed sample I7 (b, ◇). The superimposed dotted curves are fits to the Varshni relation.

Image of FIG. 4.
FIG. 4.

Variation of full width at half maximum (FWHM) with temperature in samples R (a, ▴), E7 (a, ◻), I6 (b, •), and I7 (b, ◇).

Image of FIG. 5.
FIG. 5.

Temperature dependence of the integrated PL intensity for samples R, E7, I6, and I7. The dashed curves are calculated using Eq. (2).

Image of FIG. 6.
FIG. 6.

High-resolution x-ray-diffraction spectra (HRXRD) of E7 and I6.

Tables

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Table I.

Summary of the samples and their parameters.

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/content/aip/journal/jap/98/1/10.1063/1.1931032
2005-07-06
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Annealing effects on the temperature dependence of photoluminescence characteristics of GaAsSbN single-quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/1/10.1063/1.1931032
10.1063/1.1931032
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