Electron micorscope images for the Si nanocrystalline thin film deposited at RT, annealed at 800 °C for 10 min in ambient gas, and oxidized in the air: (a) SEM plane view, (b) SEM cross-sectional image, and (c) HRTEM image.
PL spectra obtained from films deposited at the substrate temperatures from RT to 400 °C.
AFM images of the samples deposited at (a) room temperature, (b) 100 °C, and (c) 400 °C.
PL spectra from the films annealed at various temperatures ranging from 400 to 800 °C. All samples were annealed in ambient gas for 10 min.
The effect of oxidation on the PL for the films grown at RT, annealed at 800 °C in for 10 min.
Schematic of the formation of nanocrystalline Si thin films in PLD. Films are formed by three steps of growth, passivating defect centers, and isolation which were the results of deposition, postannealing, and oxidation, respectively.
rms roughness of the samples deposited at various temperatures.
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