(a) Interface state densities for unpassivated oxides on the Si face, face, and C face of 4H-SiC showing the highest trap density on the C face. (b) Comparison of high-low CV characteristics for the Si and C faces. Point “A” corresponds to the observed “bumps” that are a result of slower, deep traps.
Interface state densities for NO-passivated (Si face, face, and C face) compared to the unpassivated C-face profile. Processing details for these samples can be found in Table I.
(a) Lowest interface state densities obtained on the three faces using sequential anneals in NO and . The “NO only” C-face sample is shown for comparison. Processing details for these samples can be found in Table I. (b) Comparison for the CV characteristics for NO and C-face samples. The shift in flatband voltage is due to the reduction in the negative effective charge. A high-frequency CV curve for an unpassivated C-face sample is shown for comparison.
Processing summary for 4H-SiC MOS capacitors. at and N content at the interface for each sample are also shown.
Decrease of effective negative charge and H areal densities in the oxide (and at the interface) for (0001) Si and C samples.
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