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Raman-scattering study of the InGaN alloy over the whole composition range
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View: Figures


Image of FIG. 1.
FIG. 1.

Room-temperature Raman spectra of InGaN epilayers for nine different In fractions covering the entire alloy range. The Raman spectra were excited with the line of an laser except for the samples with and , which were excited with the line of a He–Cd laser. The peaks marked with diamonds and asterisks are due to the modes of the GaN buffer and of the substrate, respectively.

Image of FIG. 2.
FIG. 2.

Observed frequency for the and modes of the InGaN alloy vs In molar fraction for the 13 samples with different In compositions studied in the present work. The triangles correspond to MBE-grown samples, whereas the squares correspond to MOCVD-grown samples. The bars represent the width at half height of the Raman peaks. The composition dependency of the and mode energies predicted by the modified random-element isodisplacement model (Ref. 10) are plotted as dashed lines.

Image of FIG. 3.
FIG. 3.

Multiple -phonon peaks observed under near-resonant conditions for different excitation lines. To allow comparison between relative intensities of the -phonon modes, the Raman spectra have been normalized to the intensity of the mode and the luminescence background has been subtracted. The arrows indicate the corresponding multiples of the zone-center frequency.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Raman-scattering study of the InGaN alloy over the whole composition range