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Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy
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10.1063/1.1977189
/content/aip/journal/jap/98/1/10.1063/1.1977189
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/1/10.1063/1.1977189
/content/aip/journal/jap/98/1/10.1063/1.1977189
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/content/aip/journal/jap/98/1/10.1063/1.1977189
2005-07-15
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/1/10.1063/1.1977189
10.1063/1.1977189
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