(a) Deconvolution of C XPS core-level spectra and (b) total bonding fraction ratio of films as a function of Si concentration.
(a) Normalized and background subtracted visible-Raman spectra and (b) fitting parameters [intensity ratio and G peak position] of films as a function of Si content.
Raman background slope vs ratio (determined using heavy-ion ERD analysis) of samples.
UV Raman spectra of films with different silicon concentrations. The spectra are shifted to each other for ease of comparison.
(a) Optical-absorption edge vs photon energy as a function of Si content. (b1) The effect of Si incorporation on the optical band gap and (b2) Raman ratio of a series of films.
The effect of Si incorporation on (a) Young’s modulus and hardness of films. The inset illustrates the reduction of residual stress of the PECVD films as a result of the TMS-incorporation process. (b) The evolution of and concentrations vs TMS∕ flow-rate ratio.
X-ray reflectivity curves of samples with constant deposition time as a function of Si concentration. The right inset illustrates the deposition rate as a function of TMS∕ ratio. The left inset shows a close-up figure illustrating the development of a double critical angle in the spectrum of the sample ( Si).
The effect of Si addition on (a) the electron-density values, and (b) the refractive index, measured at , of films.
The effect of silicon atomic concentrations on the binding energy and full width at half maximum (FWHM) of C , , and data are obtained from the peak fitting on C binding energy.
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