Electroluminescence (EL) spectra from the facets in logarithmic scale (a) and from a window in the top-contact stripe in linear scale (b) at room temperature and at increasing injection current.
(a) Light-current characteristics of GS and ES emissions detected from the laser facet. (b) Peak intensity of GS and ES spontaneous emission spectra in Fig. 1(b) as a function of the injection current density.
(a) Density of states (DOS) of the modeled QD system. [(b) and (c)] Calculated escape times from ES and from GS, assuming a capture time and a relaxation time .
Calculated carrier distribution functions for a DOS shown in Fig. 3(a) for electrons (full line) and holes (dashed lines) and at two different values for the capture time, [Fig. 4(a)] and [Fig. 4(b)].
Calculated level populations (a) and gain distributions (b) assuming (full lines) and (dashed lines). Note that the gain is shifted towards the low-energy side with respect to the population function. This shift depends on temperature, capture time, and carrier injection.
Calculated spectra of the cavity photon number (a) and the spontaneously emitted photon number (b) in a laser cavity at increasing carrier injection rate . The FWHM of the homogenous broadening is fixed to and the assumed capture time is .
Corresponding curves to Figs. 6(a) and 6(b) for the integrated cavity photon numbers (normalized by the total number of QDs) (a) and the values of the SE spectrum at the DOS peak position (b) plotted over the carrier injection rate .
Calculated carrier distribution functions under lasing conditions for electrons (full line) and holes (dashed lines).
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