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Role of thermal hopping and homogeneous broadening on the spectral characteristics of quantum dot lasers
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10.1063/1.2133932
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    Affiliations:
    1 Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Quantum Electronics and Photonics, CH-1015 Lausanne, Switzerland
    a) Electronic mail: alexander.markus@epfl.ch
    b) Present address: Bell Laboratories, Lucent Technologies, Inc., 600 Mountain Ave., Murray Hill, NJ 07974.
    c) Permanent address: Institute of Photonics and Nanotechnology, CNR, Via del Cineto Romano 42, 00156 Rome, Italy.
    J. Appl. Phys. 98, 104506 (2005); http://dx.doi.org/10.1063/1.2133932
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http://aip.metastore.ingenta.com/content/aip/journal/jap/98/10/10.1063/1.2133932
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Electroluminescence (EL) spectra from the facets in logarithmic scale (a) and from a window in the top-contact stripe in linear scale (b) at room temperature and at increasing injection current.

Image of FIG. 2.
FIG. 2.

(a) Light-current characteristics of GS and ES emissions detected from the laser facet. (b) Peak intensity of GS and ES spontaneous emission spectra in Fig. 1(b) as a function of the injection current density.

Image of FIG. 3.
FIG. 3.

(a) Density of states (DOS) of the modeled QD system. [(b) and (c)] Calculated escape times from ES and from GS, assuming a capture time and a relaxation time .

Image of FIG. 4.
FIG. 4.

Calculated carrier distribution functions for a DOS shown in Fig. 3(a) for electrons (full line) and holes (dashed lines) and at two different values for the capture time, [Fig. 4(a)] and [Fig. 4(b)].

Image of FIG. 5.
FIG. 5.

Calculated level populations (a) and gain distributions (b) assuming (full lines) and (dashed lines). Note that the gain is shifted towards the low-energy side with respect to the population function. This shift depends on temperature, capture time, and carrier injection.

Image of FIG. 6.
FIG. 6.

Calculated spectra of the cavity photon number (a) and the spontaneously emitted photon number (b) in a laser cavity at increasing carrier injection rate . The FWHM of the homogenous broadening is fixed to and the assumed capture time is .

Image of FIG. 7.
FIG. 7.

Corresponding curves to Figs. 6(a) and 6(b) for the integrated cavity photon numbers (normalized by the total number of QDs) (a) and the values of the SE spectrum at the DOS peak position (b) plotted over the carrier injection rate .

Image of FIG. 8.
FIG. 8.

Calculated carrier distribution functions under lasing conditions for electrons (full line) and holes (dashed lines).

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2005-11-29
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of thermal hopping and homogeneous broadening on the spectral characteristics of quantum dot lasers
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/10/10.1063/1.2133932
10.1063/1.2133932
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