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Anisotropy of selective epitaxy in nanoscale-patterned growth: GaAs nanowires selectively grown on a -patterned (001) substrate by molecular-beam epitaxy
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10.1063/1.2132093
/content/aip/journal/jap/98/11/10.1063/1.2132093
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/11/10.1063/1.2132093
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) A 45° tilted SEM image of the as-grown sample taken along [110]. This image is a composite of three SEM photographs. (b) A side-view SEM image of the same area shown in (a) but taken along . The numbers from 1 to 5 in (a) and (b) indicate the same features.

Image of FIG. 2.
FIG. 2.

(a) A side-view SEM image of the as-grown sample taken in another region of GaAs nanowires. (b) A 45° tilted SEM image of a -long GaAs nanowire. (c) A SEM image of a single GaAs nanowire taken along .

Image of FIG. 3.
FIG. 3.

(a) An XTEM image of a GaAs nanowire grown along . (b) A high-resolution XTEM image taken inside of the nanowire shown in (a). (c) An SAED pattern of the nanowire shown in (a).

Image of FIG. 4.
FIG. 4.

(a) An XTEM image of a GaAs nanowire grown along and a whiskerlike wire. (b) A 45° tilted SEM image of a whiskerlike wire similar to that shown in (a).

Image of FIG. 5.
FIG. 5.

Schematic illustrations of the edge facets of the nanowires shown in (a) Fig. 3(a) and (b) Fig. 4(a).

Image of FIG. 6.
FIG. 6.

High-resolution XTEM images taken at boxes A (a) and B (b) indicated in Fig. 4(a). In each figure, the surface is indicated by a dashed line. For the nanowire, the surface is very flat, while for the whisker there is a several-nanometer-high dip which may contribute to the different growth morphologies.

Image of FIG. 7.
FIG. 7.

High-resolution XTEM images taken at boxes C (a) and D (b) near the boundaries of the GaAs nanowire shown in Fig. 4(a). The dotted line in (b) follows the surface of the mask.

Image of FIG. 8.
FIG. 8.

High-resolution XTEM images taken at boxes E (a) and F (b) near the boundaries of the GaAs dot shown in the inset of (a). The dotted line in each image follows the surface of the mask.

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/content/aip/journal/jap/98/11/10.1063/1.2132093
2005-12-13
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anisotropy of selective epitaxy in nanoscale-patterned growth: GaAs nanowires selectively grown on a SiO2-patterned (001) substrate by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/11/10.1063/1.2132093
10.1063/1.2132093
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