(Color) Model of metal-insulator-semiconductor field-effect transistor with gate stacks. Two types of fixed charges are assumed to explain and reduced .
Schematic illustration of image charge effects. Two interfaces of poly- and /substrate renormalize true charge to effective charge and generate image charges successively.
Comparison of calculated remote-charge-scattering limited mobility with those of other groups as a function of effective field .
(Color) Agreement between calculated and measured effective mobility for metal-insulator-semiconductor field-effect transistors with ultrathin gate oxide.
Calculated remote-charge-scattering limited mobility from depletion charges with density in poly-Si gate.
Recovery of remote-charge-scattering-limited mobility due to the introduction of ideal high- gate dielectrics. No fixed charge is assumed to be present in high- gate dielectrics. RCS from depletion charges in the poly-Si gate does not effectively reduce mobility of metal-insulator-semiconductor field-effect transistors with high- gate dielectrics since depletion charges are physically distant from the channel.
(Color) Experimental low-temperature mobility of metal-insulator-semiconductor field-effect transistors with and . The mobility of remained lower than that of at , which implies that remote charge scattering from fixed charges is dominant over remote phonon scattering.
(Color) Calculated vs measured effective mobility for metal-insulator-semiconductor field-effect transistors with and . The slight increase in mobility by using Al gate compared with that using poly-Si gate may be attributed to screening of fixed charges by metal gate electrode.
(Color) Calculated effective mobility increased with interfacial oxide thickness, .
(Color) Calculated (lines) and experimental (circles) effective mobility improved with increasing interfacial oxide thickness, .
(Color) Dependence of effective mobility on interfacial oxide thickness: calculated (lines) and experimental (circles).
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