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Remote-charge-scattering limited mobility in field-effect transistors with and gate stacks
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10.1063/1.2135878
/content/aip/journal/jap/98/11/10.1063/1.2135878
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/11/10.1063/1.2135878
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color) Model of metal-insulator-semiconductor field-effect transistor with gate stacks. Two types of fixed charges are assumed to explain and reduced .

Image of FIG. 2.
FIG. 2.

Schematic illustration of image charge effects. Two interfaces of poly- and /substrate renormalize true charge to effective charge and generate image charges successively.

Image of FIG. 3.
FIG. 3.

Comparison of calculated remote-charge-scattering limited mobility with those of other groups as a function of effective field .

Image of FIG. 4.
FIG. 4.

(Color) Agreement between calculated and measured effective mobility for metal-insulator-semiconductor field-effect transistors with ultrathin gate oxide.

Image of FIG. 5.
FIG. 5.

Calculated remote-charge-scattering limited mobility from depletion charges with density in poly-Si gate.

Image of FIG. 6.
FIG. 6.

Recovery of remote-charge-scattering-limited mobility due to the introduction of ideal high- gate dielectrics. No fixed charge is assumed to be present in high- gate dielectrics. RCS from depletion charges in the poly-Si gate does not effectively reduce mobility of metal-insulator-semiconductor field-effect transistors with high- gate dielectrics since depletion charges are physically distant from the channel.

Image of FIG. 7.
FIG. 7.

(Color) Experimental low-temperature mobility of metal-insulator-semiconductor field-effect transistors with and . The mobility of remained lower than that of at , which implies that remote charge scattering from fixed charges is dominant over remote phonon scattering.

Image of FIG. 8.
FIG. 8.

(Color) Calculated vs measured effective mobility for metal-insulator-semiconductor field-effect transistors with and . The slight increase in mobility by using Al gate compared with that using poly-Si gate may be attributed to screening of fixed charges by metal gate electrode.

Image of FIG. 9.
FIG. 9.

(Color) Calculated effective mobility increased with interfacial oxide thickness, .

Image of FIG. 10.
FIG. 10.

(Color) Calculated (lines) and experimental (circles) effective mobility improved with increasing interfacial oxide thickness, .

Image of FIG. 11.
FIG. 11.

(Color) Dependence of effective mobility on interfacial oxide thickness: calculated (lines) and experimental (circles).

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/content/aip/journal/jap/98/11/10.1063/1.2135878
2005-12-08
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Remote-charge-scattering limited mobility in field-effect transistors with SiO2 and Al2O3∕SiO2 gate stacks
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/11/10.1063/1.2135878
10.1063/1.2135878
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