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Interface structure and perpendicular exchange bias in multilayers
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10.1063/1.2137878
/content/aip/journal/jap/98/11/10.1063/1.2137878
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/11/10.1063/1.2137878
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Out-of-plane hysteresis loops of multilayers grown at different Ar ion-beam energies (250, 500, and 750 eV) and biased multilayers grown at an ion-beam energy of 250 eV. (Inset) Exchange bias field and coercivity vs FeMn thickness.

Image of FIG. 2.
FIG. 2.

Out-of-plane hysteresis loops of multilayers with FeMn deposited at different Ar ion-beam energies. (Inset) Exchange bias field and coercivity vs ion-beam energy.

Image of FIG. 3.
FIG. 3.

x-ray diffraction (XRD) of multilayers grown at different Ar ion-beam energies: (a) 250, (b) 500, and (c) 750 eV. (d) multilayer grown at an ion-beam energy of 250 eV.

Image of FIG. 4.
FIG. 4.

X-ray reflectivity (XRR) of multilayers grown at different Ar ion-beam energies: (a) 250, (b) 500, and (c) 750 eV. (d) multilayers grown at an ion-beam energy of 250 eV.

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/content/aip/journal/jap/98/11/10.1063/1.2137878
2005-12-06
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface structure and perpendicular exchange bias in (Co∕Pt)n∕FeMn multilayers
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/11/10.1063/1.2137878
10.1063/1.2137878
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