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Nonvolatile phase change memory nanocell fabrication by femtosecond laser writing assisted with near-field optical microscopy
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10.1063/1.2141649
/content/aip/journal/jap/98/12/10.1063/1.2141649
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/12/10.1063/1.2141649
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Simulation of electric field distribution based on the Bethe-Bouwkamp model, when , , and , respectively.

Image of FIG. 2.
FIG. 2.

Schematic of NSOM and femtosecond laser integration for nanolithography.

Image of FIG. 3.
FIG. 3.

3D AFM image of a nanodot array fabricated by NSOL on a substrate: electrode/Si, with experimental parameters of fs laser/NSOM: setpoint ; pulse delay .

Image of FIG. 4.
FIG. 4.

Cell bottom contact diameter as a function of the delivered laser power inspected by the PMT.

Image of FIG. 5.
FIG. 5.

AFM profile analysis for nanocell array fabrication on the photoresist of thickness: (a) NSOM setpoint , and exposure time is ; (b) NSOM setpoint , and exposure time is .

Image of FIG. 6.
FIG. 6.

AFM profile analysis of dual-peak nanostructure written by NSOL with smaller near-field distance.

Image of FIG. 7.
FIG. 7.

AFM characterizations of nanocell in different fabrication processes: open via on (a) photoresist; (b) intermediate wet etching; (c) layer; (d) 3D image of the fabricated cell on with dimensions of surface diameter/bottom diameter/depth .

Image of FIG. 8.
FIG. 8.

Schematic cross section of a PCRAM cell.

Image of FIG. 9.
FIG. 9.

SEM image of memory cell .

Image of FIG. 10.
FIG. 10.

PCRAM programming current as a function of nanocell feature size.

Image of FIG. 11.
FIG. 11.

- curve of CRAM cell with , the RESET current is with short pulse width .

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/content/aip/journal/jap/98/12/10.1063/1.2141649
2005-12-30
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonvolatile phase change memory nanocell fabrication by femtosecond laser writing assisted with near-field optical microscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/12/10.1063/1.2141649
10.1063/1.2141649
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