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Characteristics of type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates
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10.1063/1.2148620
/content/aip/journal/jap/98/12/10.1063/1.2148620
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/12/10.1063/1.2148620
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic energy band diagram for the active region of the proposed dilutenitride type-II “W” laser.

Image of FIG. 2.
FIG. 2.

(a) XRD (400) scan and (b) (311) reciprocal space map for a -thick GaAsN film.

Image of FIG. 3.
FIG. 3.

XRD high-resolution scan around the (400) Bragg peak (bottom) and a dynamical simulation (top) for a four period SL.

Image of FIG. 4.
FIG. 4.

XRD high-resolution scan around the (400) Bragg peak (bottom) and a dynamical simulation (top) for a four period SL.

Image of FIG. 5.
FIG. 5.

Cross-sectional BF TEM micrograph of a four period SL.

Image of FIG. 6.
FIG. 6.

PL spectra from as-grown (bottom) and annealed (top) four period SL.

Image of FIG. 7.
FIG. 7.

PL spectra from as-grown (bottom) and annealed (top) four period SL.

Image of FIG. 8.
FIG. 8.

Room temperature PL spectrum from the annealed four period SL sample of Fig. 7.

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/content/aip/journal/jap/98/12/10.1063/1.2148620
2005-12-29
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of GaAsN∕GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/12/10.1063/1.2148620
10.1063/1.2148620
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