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Time-domain and lock-in rate-window photocarrier radiometric measurements of recombination processes in silicon
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10.1063/1.2148631
/content/aip/journal/jap/98/12/10.1063/1.2148631
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/12/10.1063/1.2148631

Figures

Image of FIG. 1.
FIG. 1.

Lock-in rate-window PCR experimental configuration for laser-pulse generation with fixed and variable .

Image of FIG. 2.
FIG. 2.

Laser power dependence of (a) PCR amplitude and (b) phase of a -type Si wafer used in time-domain and rate-window experiments under harmonically modulated conditions at 10 kHz. The amplitude shows best-fit power laws to the data, including a linear fit in the range of 20–400 mW. The phase is also independent of power in that range.

Image of FIG. 3.
FIG. 3.

Room-temperature experimental and best-fitted PCR transient results for -Si sample using transient PCR theory with an infinite pulse train, Eq. (22). Wafer thickness , , and . Other constants are (corresponding to ) and . Solid line: theoretical fit; circles: experimental data.

Image of FIG. 4.
FIG. 4.

Room-temperature experimental and best-fitted PCR transient results for -Si sample using transient PCR theory with an infinite pulse train, Eq. (22). Wafer thickness , , and . Other constants are (corresponding to ) and . Standard deviations are on the order of the size of the symbols and are not shown. Solid line: theoretical fit; circles: experimental data.

Image of FIG. 5.
FIG. 5.

Room-temperature experimental (circles) and best-fitted (lines) lock-in rate-window PCR results for -Si sample using lock-in rate-window PCR theory with an infinite pulse train: , , and . Standard deviations are on the order of the size of the symbols and are not shown.

Image of FIG. 6.
FIG. 6.

Room-temperature experimental (circles) and best-fitted (lines) lock-in rate-window PCR results for -Si sample using lock-in rate-window PCR theory with an infinite pulse train. , , and . Standard deviations are on the order of the size of the symbols and are not shown.

Image of FIG. 7.
FIG. 7.

experimental and best-fitted lock-in rate-window PCR results for -Si sample using lock-in rate-window PCR theory with an infinite pulse train. and . Solid line: theoretical fit; triangles: experimental data.

Image of FIG. 8.
FIG. 8.

Cross section of one-dimensional geometry for PCR signal generation in a semiconductor with thickness on which an incident laser-pulse wave train of duration and repetition period impinge.

Image of FIG. 9.
FIG. 9.

Time-domain infinite-pulse-train PCR transients normalized to the maximum value with front-surface recombination velocity, , as a parameter. , , , , and . Other constants are (corresponding to ) and .

Image of FIG. 10.
FIG. 10.

Comparison between single-pulse and infinite-pulse responses with various bulk lifetime values as a parameter. Solid line: single-shot transient; hollow squares: transient following an infinite prior pulse train. , , , , and .

Image of FIG. 11.
FIG. 11.

Infinite-pulse-train time-domain-simulated PCR signals with thickness as a parameter. , , , , and . Other constants are (corresponding to ) and .

Image of FIG. 12.
FIG. 12.

Simulated in-phase (a) and quadrature (b) rate-window PCR signals with as a parameter. , , , , and . Other constants are (corresponding to ) and .

Image of FIG. 13.
FIG. 13.

Simulated in-phase (a) and quadrature (b) rate-window PCR signals with as a parameter. , , , , and . Other constants are (corresponding to ) and .

Image of FIG. 14.
FIG. 14.

Simulated in-phase (a) and quadrature (b) rate-window PCR signals with as a parameter. , , , , : (squares), (circles), (triangles), (stars), and (pentagons). Full symbols: single-pulse PCR response, Eqs. (19a) and (19b); hollow symbols: infinite-pulse-train PCR response, Eq. (22). Other constants are (corresponding to ) and .

Tables

Generic image for table
Table I.

Comparison of the fitted transport parameters of -Si sample and -Si sample at room temperature using transient, Eq. (22), and rate window, Eqs. (25) and (27), methods.

Generic image for table
Table II.

Fitted transport parameters of -Si sample at various temperatures.

Generic image for table
Table III.

Fitted transport parameters of -Si sample at various temperatures.

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/content/aip/journal/jap/98/12/10.1063/1.2148631
2005-12-27
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Time-domain and lock-in rate-window photocarrier radiometric measurements of recombination processes in silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/12/10.1063/1.2148631
10.1063/1.2148631
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