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Initial stage of InAs growth on Si (001) studied by high-resolution transmission electron microscopy
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Image of FIG. 1.
FIG. 1.

The ⟨011⟩ HR-TEM micrograph of an InAs island on Si (001) with dislocation formed at the interface. The dislocations are marked and the arrows show the extra {111} half-planes.

Image of FIG. 2.
FIG. 2.

⟨The 011⟩ HR-TEM image of an InAs island on Si (001) with 60° and 90° dislocations at the interface.

Image of FIG. 3.
FIG. 3.

RHEED images with substrate temperature before InAs growth (a) and after 0.7 ML InAs growth (b).

Image of FIG. 4.
FIG. 4.

Moiré fringes of InAs island on Si (001). The terminated moiré fringe indicates the existence of a threading dislocation coming out of the image plane. The moiré pattern obtained using two-beam diffraction in order to highlight the terminated fringe.

Image of FIG. 5.
FIG. 5.

Schematic picture for dislocation interactions.

Image of FIG. 6.
FIG. 6.

The ⟨011⟩ cross-section HR-TEM images of two types of InAs islands on Si (001) with distinctively different shapes. (a) and (b) are in a pyramidal shape, and (c) is in a dome shape. The dashed lines highlight the shape of the islands.


Generic image for table
Table I.

Height, diameter, and aspect ratio of islands with different shapes.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Initial stage of InAs growth on Si (001) studied by high-resolution transmission electron microscopy