thin films: electrical resistivity vs temperature for different Si concentration in at. %. The solid lines are the best fits with the grain-boundary model.
thin films: optical reflectivity vs photon energy for different Si content.
Real and imaginary parts of the dielectric function of thin films.
Refractive index and extinction coefficient spectra of thin films as a function of the Si content.
Experimental and numerically calculated (solid lines) reflectivity and real part spectra for two thin films with low (a) and relatively high (b) Si contents.
Grain-boundary transmission probability (full circles), damping factor (full squares), and Si coverage (open triangles) as a function of the Si content .
Chemical composition and mean crystallite size (from XRD data) of thin films. The precision in the determination of the grain size is better than .
Typical parameters obtained for the best fit of electrical resistivity of thin films with the grain boundary scattering model. The Si content in the films is given in at. %.
Representative values of the fitted Drude-Lorentz parameters for films as a function of the at. % of Si in the photon energy range of . The fixed parameters are , with and , and with .
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