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Relationship between the physical and structural properties of thin films deposited by dc reactive magnetron sputtering
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10.1063/1.2149488
/content/aip/journal/jap/98/12/10.1063/1.2149488
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/12/10.1063/1.2149488

Figures

Image of FIG. 1.
FIG. 1.

thin films: electrical resistivity vs temperature for different Si concentration in at. %. The solid lines are the best fits with the grain-boundary model.

Image of FIG. 2.
FIG. 2.

thin films: optical reflectivity vs photon energy for different Si content.

Image of FIG. 3.
FIG. 3.

Real and imaginary parts of the dielectric function of thin films.

Image of FIG. 4.
FIG. 4.

Refractive index and extinction coefficient spectra of thin films as a function of the Si content.

Image of FIG. 5.
FIG. 5.

Experimental and numerically calculated (solid lines) reflectivity and real part spectra for two thin films with low (a) and relatively high (b) Si contents.

Image of FIG. 6.
FIG. 6.

Grain-boundary transmission probability (full circles), damping factor (full squares), and Si coverage (open triangles) as a function of the Si content .

Tables

Generic image for table
Table I.

Chemical composition and mean crystallite size (from XRD data) of thin films. The precision in the determination of the grain size is better than .

Generic image for table
Table II.

Typical parameters obtained for the best fit of electrical resistivity of thin films with the grain boundary scattering model. The Si content in the films is given in at. %.

Generic image for table
Table III.

Representative values of the fitted Drude-Lorentz parameters for films as a function of the at. % of Si in the photon energy range of . The fixed parameters are , with and , and with .

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/content/aip/journal/jap/98/12/10.1063/1.2149488
2005-12-23
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Relationship between the physical and structural properties of NbzSiyNx thin films deposited by dc reactive magnetron sputtering
http://aip.metastore.ingenta.com/content/aip/journal/jap/98/12/10.1063/1.2149488
10.1063/1.2149488
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